AMAT targets increasing periphery speed in DRAM with new gate stack system
from ElectroIQ
In a bid to increase DRAM periphery speeds, which enhance DRAM output, Applied Materials has announced its Centura DPN HD (HD=high dose) gate stack system for oxynitride gate scaling. The tool uses decoupled plasma nitridation for high surface nitrogen content. David Chu, global products management Gate Stack & Dielectrics KPU, Front End Products at Applied Materials, discusses DRAM scaling challenges in a detailed podcast interview and explains how higher nitrogen content leads to higher capacitance, thus enabling EOT scaling.
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This episode was published on July 6, 2011.
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