Bosch's Silicon Carbide Breakthroughs: 200 mm Wafers, Trench MOSFETs & EV Power Performance

In this episode of The Electropages Podcast, host Robin Mitchell interviews Ralf Bornefeld, Senior Vice President for Power Semiconductors and Modules at Robert Bosch GmbH. Ralf explains how Bosch is advancing silicon carbide technology through 200 mm wafer production, improved yields, and high performance trench MOSFET designs that support the next generation of electric vehicles. The conversation covers key developments in SiC manufacturing, including defect reduction, epi layer control, device robustness, and the shift from planar to trench structures. Ralf also shares how Bosch benefits from being both an integrated device manufacturer and a Tier 1 automotive supplier, giving the company direct insight into the real world requirements of traction inverters, onboard chargers, and DC to DC converters. Engineers will learn about the performance gains made possible by silicon carbide devices, the advantages of higher power density, the role of advanced gate drivers, and why SiC is becoming a preferred technology for modern EV platforms.  This episode provides a clear and detailed walkthrough of where silicon carbide is heading and how Bosch is influencing the direction of power electronics.