Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles

from [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices · host Gerhard Klimeck

Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically spaced 20-100nm away from the central double barrier structure.

Episode metadata supplied by the publisher feed · Published Jan 27, 2010

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Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles

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