Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
from [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices Hosted by Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the systemLearning Objectives:Strain is the source of the creation of the InAs QDs on GaAsStrain is a long range phenomenonStrain reaches further vertically than horizontallyQuantum dots will grow on top of each otherElectron wavefunctions are confined to the central quantum dots and can be computed in a smaller domain
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