Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
from [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices Hosted by Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption wavelength of the quantum dots. The role of the non-linear strain behavior ovserved in the experimental data is explored in NEMO3D. The simulation engine serves as a virtual microscope to understand the interplay of disorder, strain, and quantum dot shape.Learning Objectives:Objective:Optical emission at 1.5μm without GaNUnderstand experimental data on QD spectra in selective overgrowthApproach: Model large structure60nm x 60nm x 60nm9 million atomsNo changes to the published tight binding parametersResult:Match experiment remarkably well Strain change in quantum dot aspect ratio Quantitative model of complex systemStudied sensitivity to experimental imperfections – small variationsEffective mass theories provided the wrong guidance
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