Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

from [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices · host Gerhard Klimeck, Mathieu Luisier

This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER => Performance Deterioration Outlook and Challenges Ripples Scattering More Accurate Bandstructure Model Dissipative Scattering (Electron-Phonon)

Episode metadata supplied by the publisher feed · Published Aug 5, 2010

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Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

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