Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

from [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices · host Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier

This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues Outlook Improve Models (Contact) Investigate Scaling of Gate Length Scattering?

Episode metadata supplied by the publisher feed · Published Aug 5, 2010

Embed this episode

Attribution link and audio player

NOW PLAYING

Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT

0:00 0:00

1×

No transcript for this episode yet

We transcribe on demand. Request one and we'll notify you when it's ready — usually under 10 minutes.

Share this episode

Similar Episodes

No similar episodes found.

Similar Podcasts

No similar podcasts found.

Frequently Asked Questions

When was this [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices episode published?

This episode was published on August 5, 2010.

Can I download this [Audio] Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices episode?

Yes. Use the download control on the episode player to save the publisher-provided media file.

URL copied to clipboard!